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Institut Universitaire de France
Michel Hehn was born in 1971. He received the Ph.D. degree from the University of Strasbourg, Strasbourg, France, in 1997 for his work on the structural and magnetic properties of mesoscopic magnetic systems. His pioneer paper on domain walls in nanodots published in Science has been cited more than 280 times. He became a specialist in mesoscopic magnetism. He performed postdoctoral fellowships at the University of Orsay in Albert Fert’s group (Nobel Price of Physics 2007), France, the University of Strasbourg, and Siemens AG, Erlangen, Germany, to extend his competence to spin electronics. He was the first in France to get TMR using Al2O3.
In 1998, he joined the French National Center of Scientific Research where his main topics were magnetic tunnel junctions, magnetic nanostructures and couplings appearing into or in between those structures. With Alain Schuhl, they brought spintronics in the main topics of the nanomagnetism and spintronics group at the Institut Jean Lamour with mainly highly cited papers on MgO epitaxial tunnel barriers.
Since 2006, he became professor at University de Lorraine and in 2008 leader of the regional C’Nano Grand Est and professor at the Institut Universitaire de France. During his career, he won 3 prices of the Region Lorraine and, in 2010, he won the Yves Rocard 2010 Price of the French Society of Physics for the invention and the technological development of “a new generation of magnetic sensors for ASB” for the SNR society.
These last years, he built up a UHV growth set up that combines sputtering, molecular beam epitaxy, ion etching and chemical analysis that allowed to synthetize thin film materials or nanostructures that led breakthroughs in many fields in solid state physics
Title of ICPAM talk: Electronic spin precession at low energy in all solid state devices