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Technical University of Cluj-Napoca, Romania
Coriolan Tiusan got in 2000 a PhD in Physics of the Strasbourg University, France following a joint European thesis with SIEMENS Erlangen. From this thesis issued a first generation of tunneling sensor devices for automotive applications based on artificial antiferromagnetic systems electrodes. Next, in a joint postdoc between the Strasbourg University and the Clarendon Laboratory Oxford, C. Tiusan had major contributions in developing of a new spin-transistor concept and device based on tunnel junctions and semiconductor transport channel. In 2001, he joined the French National Center of Scientific Research (CNRS) where his main research topics has been related to spin and charge transport in single crystal magnetic tunnel junction systems correlated with electronic structure aspects. Among his outstanding obtained research results one can mention: the discovery of the interlayer exchange coupling by spin polarized tunneling in expitaxial magnetic tunnel junctions systems with atomic layer level control of insulating barrier, first demonstration of giant tunnel magnetoresistance effects beyond free-electrons model predictions, engineering of interfacial electronic structure to provide novel magnetorezistive response, demonstration of symmetry filtering and symmetry dependent quantum wells in metallic materials as constituents of complex MTJ stacks. He also had major contributions in developing of MTJ systems with alternative ferromagnetic materials: transition metal and full Heusler alloys. His remarkable results have been rewarded by some prestigious awards: the Bronze Medal of the French National Center of Scientific Research in 2006, the “Constantin Miculescu” of the Romanian Academy (2012), the French national award for scientific excellence (PES) (2008-2011), 2 prizes of the Region Lorraine, 1 prize of TUCN. In 2010, C. Tiusan joined, by detachment from CNRS-France, the Technical University of Cluj-Napoca (TUCN) to coordinate as a foreign expert a project funded by the European Commission, targeting the local implementation of the spintronics research axis by overcoming the step from materials to functional devices. In 2013, C. Tiusan got a tenured University Professor position at TUCN, where beyond research activities he develops teaching activities on Elementary and Advanced Physics, Nanotechnologies, Biophysics. Since 2010, at TUCN-Romania, his team successfully elaborated perpendicularly magnetic layers and patterned spintronic devices based on materials with high polarization and low/controlled Gilbert damping, extremely useful for data storage applications (HDD, MRAM), oscillators. Beyond scientific expertise, C. Tiusan had major contribution in experimental development of the research facilities in the Romanian implementation laboratory to both acquiring new setups (vibrating sample magnetometer, cryogen-free system for variable field and temperature 7T, 1.5K, Auger spectroscope) and functionalizing of UV lithography facilities for patterning of functional spintronic devices, design and building a new UHV growth set up that combines sputtering, molecular beam epitaxy, ion etching and chemical analysis.
Title of ICPAM talk: Alternative energetically efficient magnetization manipulation strategies in spintronic devices