Coriolan TIUSAN

Coriolan TIUSAN

Coriolan TIUSAN

Technical University of Cluj-Napoca, Romania

Coriolan Tiusan got in 2000 a PhD in Physics of the Strasbourg
University, France following a joint European thesis with SIEMENS
Erlangen. From this thesis issued a first generation of tunneling sensor
devices for automotive applications based on artificial
antiferromagnetic systems electrodes. Next, in a joint postdoc between
the Strasbourg University and the Clarendon Laboratory Oxford, C. Tiusan
had major contributions in developing of a new spin-transistor concept
and device based on tunnel junctions and semiconductor transport
channel. In 2001, he joined the French National Center of Scientific
Research (CNRS) where his main research topics has been related to spin
and charge transport in single crystal magnetic tunnel junction systems
correlated with electronic structure aspects. Among his outstanding
obtained research results one can mention: the discovery of the
interlayer exchange coupling by spin polarized tunneling in expitaxial
magnetic tunnel junctions systems with atomic layer level control of
insulating barrier, first demonstration of giant tunnel
magnetoresistance effects beyond free-electrons model predictions,
engineering of interfacial electronic structure to provide novel
magnetorezistive response, demonstration of symmetry filtering and
symmetry dependent quantum wells in metallic materials as constituents
of complex MTJ stacks. He also had major contributions in developing of
MTJ systems with alternative ferromagnetic materials: transition metal
and full Heusler alloys. His remarkable results have been rewarded by
some prestigious awards: the Bronze Medal of the French National Center
of Scientific Research in 2006, the “Constantin Miculescu” of the
Romanian Academy (2012), the French national award for scientific
excellence (PES) (2008-2011), 2 prizes of the Region Lorraine, 1 prize
of TUCN. In 2010, C. Tiusan joined, by detachment from CNRS-France, the
Technical University of Cluj-Napoca (TUCN) to coordinate as a foreign
expert a project funded by the European Commission, targeting the local
implementation of the spintronics research axis by overcoming the step
from materials to functional devices. In 2013, C. Tiusan got a tenured
University Professor position at TUCN, where beyond research activities
he develops teaching activities on Elementary and Advanced Physics,
Nanotechnologies, Biophysics. Since 2010, at TUCN-Romania, his team
successfully elaborated perpendicularly magnetic layers and patterned
spintronic devices based on materials with high polarization and
low/controlled Gilbert damping, extremely useful for data storage
applications (HDD, MRAM), oscillators. His team recently demonstrated
successful manipulation of magnetization by spin-torque effects using
spin currents spin-orbitronically generated (spin Hall Effect) and
successfully elaborated angular position magnetic sensors based on
magnetoresistance effect. Beyond scientific expertise, C. Tiusan had
major contribution in experimental development of the research
facilities in the Romanian implementation laboratory to both acquiring
new setups (vibrating sample magnetometer, cryogen-free system for
variable field and temperature 7T, 1.5K, Auger spectroscope) and
functionalizing of UV lithography facilities for patterning of
functional spintronic devices. With his TUCN colleagues, he is currently
building a new UHV growth set up that combines sputtering, molecular
beam epitaxy, ion etching and chemical analysis. This will allow
synthetizing more complex film materials with further upstreaming
targets in solid state physics and material science.